Terahertz-wave sub-harmonic mixer based on silicon carbide platform

A CMOS Sub-harmonic Mixer for WCDMA

This report describes a sub-harmonic mixer for WCDMA applications. The circuit converts a 2 GHz RF signal directly to baseband using a 1 GHz LO frequency. The mixer uses common source MOSFETs with inductive degeneration to convert the input RF voltage to a current. This current is then steered using a switching network composed of triode-region MOSFETs that is driven with the LO and a 90 degree...

Silicon-based Terahertz Signal Generation with Multi-phase Sub-harmonic Injection Locking Technique

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Shock-wave strength properties of boron carbide and silicon carbide

Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100 MPa). T...